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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU4508DF
DESCRIPTION *With TO-3PFa package *High voltage *High speed switching *Built-in damper diode APPLICATIONS *For use in horizontal deflection circuits of colour TV receivers.
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current -peak Base Collector current (DC) Base current-peak Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base VALUE 1500 800 8 15 4 6 45 150 -65~150 UNIT V V A A A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
BU4508DF
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
800
V
V(BR)EBO
Emitter-base breakdown voltage
IE=600mA ;IC=0
7.5
13.5
V
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=1.25A
3
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1.25A VCE=BVCES; VBE=0 TC=125 IC=0.5A ; VCE=5V 7
1.03 1.0 2.0
V
ICES
Collector cut-off current
mA
hFE-1
DC current gain
hFE-2
DC current gain
IC=5A ; VCE=5V
4.2
7.3
VF
Diode forward voltage
IF=5A
2.2
V
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU4508DF
Fig.2 Outline dimensions (unindicated tolerance:0.30mm)
3


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